G2N7000 Datasheet, PDF (2/2 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE MOSFET

Switching Characteristics (Note 1)
Turn-on Delay Time
ton
-
Turn-off Delay Time
toff
-
Note 1. Pulse Test: Pulse WidthЉ300us, Duty cycleЉ2%.
ISSUED DATE :2004/02/18
REVISED DATE :2006/10/30F
-
-
10
10
ns
VDD=15V, ID=500mA
RG=25 , RL=30 , Vgen=10V
Characteristics Curve
Important Notice:
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GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : [phone] FAX : [phone]
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : [phone] ~ 4 FAX : [phone]
G2N7000
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