G2N7000 Datasheet, PDF (1/2 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE MOSFET

G2N7000
ISSUED DATE :2004/02/18
REVISED DATE :2006/10/30F
N-CHANNEL ENHANCEMENT MODE MOSFET
Description
The G2N7000 is designed for high voltage, high speed applications such as switching regulators, converters,
solenoid and relay drivers.
Package Dimensions
D
TO-92
E
S1
b1
S E A T IN G
PLANE
C
e1
b
e
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44
4.7
3.30 3.81
12.70
-
1.150 1.390
2.42 2.66
Absolute Maximum Ratings at Ta = 25к
Parameter
Operating Junction and Storage Temperature Range
Drain-Source Voltage
Gate-Source Voltage
-Continuous
-Non-repetitive (tpЉ50us)
Drain Current
-Continuous
- Pulsed
Power Dissipation
Ta=25к
Derate above 25к
Thermal Resistance ,Junction-to-Ambient
Maximum Lead Temperature for Soldering Purposes,1/16” from
case for 10 seconds
Symbol
Tj, Tstg
VDSS
VGS
VGSM
ID
IDM
PD
R JA
TL
Ratings
-55 ~ +150
60
±20
±40
200
500
0.35
2.8
357
300
Unit
к
V
V
V
mA
W
mW /к
к/W
к
Electrical Characteristics (Tc= 25к unless otherwise noted)
Parameter
Symbol Min.
Typ.
Max.
Drain-Source Breakdown Voltage
V(BR)DSS
60
-
-
Gate Threshold Voltage
VGS(th)
0.8
-
3.0
Gate Body Leakage Current
IGSS
-
-
±100
Zero Gate Voltage Drain Current
IDSS
-
-
1
On-State Drain Current
ID(ON)
75
-
-
-
Static Drain-Source on-State Resistance RDS(ON)
-
-
5.0
-
6.0
Drain-Source on-Voltage
-
VDS(ON)
-
-
2.5
-
0.45
Forward Transconductance
GFS
100
-
-
Input Capacitance
Ciss
-
-
60
Output Capacitance
Coss
-
-
25
Reverse Transfer Capacitance
Crss
-
-
5
Unit
Test Conditions
V VGS=0, ID=250uA
V VDS= VGS, ID=1.0mA
nA VGS=±20V, VDS=0
uA VDS=60V, VGS=0
mA VGS =4.5V ,VDS=10V
VGS=10V, ID=500mA
VGS=4.5V, ID=75mA
VGS=10V, ID=500mA
V
VGS=4.5V, ID=75mA
mS VDS=10 V, ID=200mA
pF
VDS=25V, VGS=0V, f=1MHz
G2N7000
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