G2301 Datasheet, PDF (2/4 Pages) GTM CORPORATION – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

CORPORATION ISSUED DATE :2004/10/12
REVISED DATE :2005/03/22B
Electrical Characteristics(Tj = 25ć Unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
-20
Breakdown Voltage Temperature Coefficient ϦBVDSS/ϦTj
-
Gate Threshold Voltage
Forward Transconductance
VGS(th)
gfs
-0.5
-
Gate-Source Leakage Current
IGSS
-
Drain-Source Leakage Current(Tj=25к)
-
IDSS
Drain-Source Leakage Current(Tj=70к)
-
Static Drain-Source On-Resistance²
RDS(ON)
-
-
Total Gate Charge²
Qg
-
Gate-Source Charge
Qgs
-
Gate-Drain (“Miller”) Change
Turn-on Delay Time²
Qgd
-
Td(on)
-
Rise Time
Tr
-
Turn-off Delay Time
Td(off)
-
Fall Time
Tf
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
-
Coss
-
Crss
-
-
-
-0.1
-
-
-
4.4
-
-
̈́100
-
-1
-
-10
-
130
-
190
5.2
10
1.36
-
0.6
-
5.2
-
9.7
-
19
-
29
-
295
-
170
-
65
-
V
V/к
V
S
nA
uA
uA
mÓ¨
nC
ns
VGS=0, ID=-250uA
Reference to 25к, ID=-1mA
VDS= VGS, ID=-250uA
VDS=-5.0V, ID=-2.8A
VGS= ̈́12V
VDS=-20V, VGS=0
VDS=-16V, VGS=0
ID=-2.8A, VGS=-5.0V
ID=-2.0A, VGS=-2.8V
ID=-2.8A
VDS=-6.0V
VGS=-5.0V
VDS=-15V
ID=-1A
VGS=-10V
RG=6Ó¨
RD=15Ó¨
VGS=0V
pF VDS=-6V
f=1.0MHz
Source-Drain Diode
Forward On Voltage²
VSD
-
Continuous Source Current(Body Diode)
IS
-
Pulsed Source Current (Body Diode) ¹
ISM
-
-
-1.2
-
-1
-
-10
V
IS=-1.6A, VGS=0 Tj=25к
A
VD= VG=0V, VS=-1.2V
A
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on 1 in² copper pad of FR4 board;270к/w when mounted on min. copper pad.
Characteristics Curve
2/4