G2301 Datasheet, PDF (1/4 Pages) GTM CORPORATION – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product
CORPORATION ISSUED DATE :2004/10/12
REVISED DATE :2005/03/22B
G2301
BVDSS
-20V
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
RDS(ON)
ID
130m
-2.6A
The G2301 provides the designer with the best combination of fast switching, low on-resistance and
cost-effectiveness.
The G2301 is universally preferred for all commercial-industrial surface mount applications and suited for low
voltage applications such as DC/DC converters.
Features
Ô¦Super High Dense Cell Design for Extremely Low R_DS(ON)
Ô¦Reliable and Rugged
Applications
Ô¦Power Management in Notebook Computer
Ô¦Portable Equipment
Ô¦Battery Powered System.
Package Dimensions
TPU.34)QBDLBHF*
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
V_DS
V_GS
I_D @TA=25к
I_D @TA=70к
I_DM
P_D @TA=25к
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient³ Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Ratings
-20
f12
-2.6
-2.1
-10
1.38
0.01
-55 ~ +150
Ratings
90
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0̓
10̓
Unit
V
V
A
A
A
W
W/ć
ć
Unit
ć/W
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