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GMS2301 Datasheet, PDF (2/3 Pages) Guilin Strong Micro-Electronics Co., Ltd. – P-Channel Enhancement-Mode MOSFETs | |||
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GMS2301
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Guilin Strong Micro-Electronics Co.,Ltd.
â ELECTRICAL CHARACTERISTICS é»ç¹æ§
(TA=25â unless otherwise noted å¦ç¡ç¹æ®èªªæï¼æº«åº¦ç² 25â)
Characteristic
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Symbol Min
符è æå°å¼
Typ
å
¸åå¼
Max
æ大å¼
Drain-Source Breakdown Voltage
æ¼æ¥µ-æºæ¥µæç©¿é»å£(ID = -250uA,VGS=0V) BVDSS
-20
Gate Threshold Voltage
æ
極éå¯é»å£(ID = -250uA,VGS= VDS)
VGS(th) -0.5
Drain-Source On Voltage
æ¼æ¥µ-æºæ¥µå°éé»å£(ID= -50mA,VGS= -5V) VDS(ON)
â
(ID = -500mA,VGS= -10V)
Diode Forward Voltage Drop
å
éäºæ¥µç®¡æ£åå£é(IS= -0.75A,VGS=0V)
VSD
â
Zero Gate Voltage Drain Current
é¶æ
å£æ¼æ¥µé»æµ(VGS=0V, VDS= -16V)
(VGS=0V, VDS= -16V, TA=55â)
IDSS
â
Gate Body Leakage
æ
極æ¼é»æµ(VGS=+8V, VDS=0V)
IGSS
â
Static Drain-Source On-State Resistance
éææ¼æºå°éé»é»(ID=2.6A,VGS=4.5V)
(ID=1A,VGS=2.5V)
Input Capacitance 輸å
¥é»å®¹
(VGS=0V, VDS= -6V,f=1MHz)
RDS(ON)
â
CISS
â
Common Source Output Capacitance
å
±æºè¼¸åºé»å®¹(VGS=0V, VDS= -6V,f=1MHz)
COSS
â
Turn-ON Time å¼å¯æé
(VDS= -6V, ID= -1A, RGEN=6Ω)
t(on)
â
Turn-OFF Time å
³ææé
(VDS= -6V, ID= -1A, RGEN=6Ω)
t(off)
â
â
â
â
-1.5
â -0.375
-3.75
â
-1.2
â
-1
-10
â
+100
â
0.15
0.22
â
880
â
270
â
20
â
65
Unit
å®ä½
V
V
V
V
uA
nA
Ω
pF
pF
ns
ns
Pulse Width<300μs; Duty Cycle<2.0%
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