GM856 Datasheet, PDF (2/3 Pages) Guilin Strong Micro-Electronics Co., Ltd. – PNP General Purpose Transistor

桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GM856,857,858(销售型號 BC856,857,858)
■ELECTRICAL CHARACTERISTICS 電特性
(TA=25℃ unless otherwise noted 如無特殊說明，溫度爲 25℃)
Characteristic
特性參數
Symbol
符號
■OFF CHARACTERISTICS 截止電特性
Collector-Emitter Breakdown Voltage
集電極發射極擊穿電壓
(Ic=-10mAdc,I_B=0)
V_(BR)CEO
856A,B
857A,B,C
858A,B,C
Collector-Base Breakdown Voltage
集電極基極擊穿電壓
(Ic=-10μAdc,I_E=0)
V_(BR)CBO
856A,B
857A,B,C
858A,B,C
Emitter-Base Breakdown Voltage
發射極基極擊穿電壓
(I_E=-10μAdc,Ic=0)
V_(BR)EBO
856A,B
857A,B,C
858A,B,C
Collector Cutoff Current 集電極截止電流
(V_CB=-30v)
(V_cB=-30Vdc,TA=150℃)
■ON CHARCTERISTICS 導通電特性
I_CBO
Characteristic
特性參數
Symbol
符號
DC Current Gain 直流電流增益
HFE
856A, 857A, 858A
(I_c=-10uAdc,V_CE=-5.0Vdc)
856B, 857B, 858B
857C,858C
856A, 857A, 858A
(I_c=-2.0mAdc,V_CE=-5.0Vdc)
856B, 857B, 858B
857C,858C
Collector-Emitter Saturation Voltage
集電極發射極飽和壓降
(I_c=-10mAdc, I_B=-0.5mAdc)
(I_c=-100mAdc, I_B=-5.0mAdc)
Base-Emitter Saturation Voltage
基極發射極飽和壓降
(I_c=-10mAdc, I_B=-0.5mAdc)
(I_c=-100mAdc, I_B=-5.0mAdc)
Base-Emitter Voltage 基極發射極電壓
V_CE(sat)
V_BE(sat)
(I_c=-2.0mAdc, VCE=-5.0Vdc)
(I_c=-10mAdc, VCE=-5.0Vdc)
VBE(on)
Min
最小值
Max
最大值
Unit
單位
-65
-45
-30
—
Vdc
-80
-50
-30
—
Vdc
-5.0
-5.0
-5.0
—
Vdc
-15
nA
—
-4.0
uA
Min
最小值
125
220
420
Typ
典型值
90
150
270
180
290
520
Max
最大值
—
250
475
800
Unit
單位
—
—
-0.3
— -0.65 Vdc
-0.7
-0.9
Vdc
-0.6
— -0.75
—
— -0.82 V