GM2321 Datasheet, PDF (2/3 Pages) Guilin Strong Micro-Electronics Co., Ltd. – P-Channel Enhancement-Mode MOS FETs

GM2321
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
■ELECTRICAL CHARACTERISTICS 電特性
(T_A=25℃ unless otherwise noted 如無特殊說明，溫度爲 25℃)
Characteristic
特性參數
Symbol Min Typ Max
符號 最小值 典型值 最大值
Drain-Source Breakdown Voltage
漏極-源極擊穿電壓(I_D = -250uA,V_GS=0V) ^BVDSS
-20
Gate Threshold Voltage
栅極開启電壓(I_D = -250uA,V_GS= V_DS)
V_GS(th) -0.5
Diode Forward Voltage Drop
内附二極管正向壓降(I_S= -0.75A,V_GS=0V)
V_SD
—
Zero Gate Voltage Drain Current
零栅壓漏極電流(V_GS=0V, V_DS= -16V)
(V_GS=0V, V_DS= -16V, T_A=55℃)
I_DSS
—
Gate Body Leakage
栅極漏電流(V_GS=+10V, V_DS=0V)
I_GSS
—
Static Drain-Source On-State Resistance
静态漏源導通電阻(I_D= -2.8A,V_GS= -4.5V) ^RDS(ON)
—
Static Drain-Source On-State Resistance
静态漏源導通電阻(I_D= -2A,V_GS= -2.5V)
R_DS(ON)
—
Input Capacitance 輸入電容
(V_GS=0V, V_DS= -10V,f=1MHz)
C_ISS
—
Output Capacitance 輸出電容
(V_GS=0V, V_DS= -10V,f=1MHz)
C_OSS
—
Turn-ON Time 开启時間
(V_DS= -10V, I_D= -2.8A, R_GEN=6Ω)
t_(on)
—
—
—
—
-1.5
—
-1.5
—
-1
-10
—
+100
—
100
—
120
600
—
120
—
8
—
Turn-OFF Time 关断時間
(V_DS= -10V, I_D= -2.8A, R_GEN=6Ω)
t_(off)
—
60
—
Unit
單位
V
V
V
uA
nA
mΩ
mΩ
pF
pF
ns
ns
Pulse Width<300μs; Duty Cycle<2.0%