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GM2321 Datasheet, PDF (1/3 Pages) Guilin Strong Micro-Electronics Co., Ltd. – P-Channel Enhancement-Mode MOS FETs | |||
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Guilin Strong Micro-Electronics Co.,Ltd.
GM2321
SOT-23 å ´æææ¶é«ç®¡(SOT-23 Field Effect Transistors)
P-Channel Enhancement-Mode MOS FETs
P æ²éå¢å¼ºå MOS åºæåºç®¡
â MAXIMUM RATINGS æ大é¡å®å¼
Characteristic
ç¹æ§åæ¸
Symbol
符è
Drain-Source Voltage
æ¼æ¥µ-æºæ¥µé»å£
Gate- Source Voltage
æ
極-æºæ¥µé»å£
Drain Current (continuous)
æ¼æ¥µé»æµ-é£çº
Drain Current (pulsed)
æ¼æ¥µé»æµ-èå²
Total Device Dissipation
總èæ£åç
TA=25âç°å¢æº«åº¦ç² 25â
BVDSS
VGS
ID
IDM
PD
Junction çµæº«
TJ
Storage Temperature å²å溫度
Tstg
â DEVICE MARKING ææ¨
GM2321=A1
Max
æ大å¼
-20
+10
-2.8
-10
550
150
-55to+150
Unit
å®ä½
V
V
A
A
mW
â
â
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