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GMBT5401 Datasheet, PDF (1/3 Pages) GTM CORPORATION – PNP EPITAXIAL PLANAR TRANSISTOR | |||
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Guilin Strong Micro-Electronics Co.,Ltd.
GMBT5401(éå®åè MMBT5401)
â FEATURES ç¹é»
PNP High Voltage Transistor
â MAXIMUM RATINGS æ大é¡å®å¼
Characteristic ç¹æ§åæ¸
Collector-Emitter Voltage
éé»æ¥µ-ç¼å°æ¥µé»å£
Collector-Base Voltage
éé»æ¥µ-åºæ¥µé»å£
Emitter-Base Voltage
ç¼å°æ¥µ-åºæ¥µé»å£
Collector CurrentâContinuous
éé»æ¥µé»æµ-é£çº
Symbol 符è
VCEO
VCBO
VEBO
Ic
Rating é¡å®å¼
-150
-160
-6.0
-500
Unit å®ä½
Vdc
Vdc
Vdc
mAdc
â THERMAL CHARACTERISTICS ç±ç¹æ§
Characteristic ç¹æ§åæ¸
Total Device Dissipation 總èæ£åç
FR-5 Board(1)
TA=25âç°å¢æº«åº¦ 25â
Derate above25â è¶
é 25âéæ¸
Thermal Resistance Junction to Ambient
ç±é»
Total Device Dissipation 總èæ£åç
Alumina Substrate æ°§åé襯åº(2) TA=25â
Derate above25â è¶
é 25âéæ¸
Thermal Resistance Junction to Ambient
ç±é»
Junction and Storage Temperature
çµæº«åå²å溫度
â DEVICE MARKING ææ¨
Symbol 符è
PD
RÎJA
PD
RÎJA
TJ,Tstg
Max æå¤§å¼ Unit å®ä½
225
mW
1.8
mW/â
556
â/W
300
mW
2.4
mW/â
417
â/W
150â, -55to+150â
GMBT5401(éå®åè MMBT5401)=2L
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