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GS820H32T Datasheet, PDF (8/23 Pages) GSI Technology – 64K x 32 2M Synchronous Burst SRAM
GS820H32T/Q-150/138/133/117/100/66
Simplified State Diagram with G
X
Deselect
W
R
W
R
X
First Write R
CW
CR
W
First Read
X
CW
CR
W
X
R
Burst Write
CR
CW
R
W Burst Read X
CW
CR
Notes:
1. The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
2. Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from Read cycles to Write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal Read cycles.
3. Transitions shown in grey tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
Rev: 1.03 2/2000
8/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
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