GS74116AGX-10I Datasheet, PDF (8/14 Pages) GSI Technology – 256K x 16 4Mb Asynchronous SRAM

Address
OE
CE
UB, LB
WE
Data In
Data Out
Address
OE
CE
UB, LB
WE
Data In
Data Out
Write Cycle 1: WE control
tWC
tAW
tWR
tCW
tBW
tAS
tWP
tWHZ
tDW tDH
Data valid
tWLZ
High impedance
Write Cycle 2: CE control
tWC
tAW
tAS
tCW
tWR1
tBW
tWP
tDW tDH
Data valid
High impedance
GS74116AGP/X
Rev: 1.10 1/2013
8/13
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, GSI Technology