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GS74116AGX-10I Datasheet, PDF (4/14 Pages) GSI Technology – 256K x 16 4Mb Asynchronous SRAM | |||
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DC I/O Pin Characteristics
Parameter
Input Leakage Current
Symbol
IIL
Output Leakage Current
ILO
Output High Voltage
VOH
Output Low Voltage
VOL
Test Conditions
VIN = 0 to VDD
Output High Z
VOUT = 0 to VDD
IOH = â4 mA
ILO = +4 mA
Min
â 1 uA
â1 uA
2.4
â
GS74116AGP/X
Max
1 uA
1 uA
â
0.4 V
Power Supply Currents
Parameter Symbol
Operating
Supply
IDD
Current
Standby
Current
ISB1
Standby
Current
ISB2
Test Conditions
CE ⤠VIL
All other inputs
⥠VIH or ⤠VIL
Min. cycle time
IOUT = 0 mA
CE ⥠VIH
All other inputs
⥠VIH or ⤠VIL
Min. cycle time
CE ⥠VDD â 0.2V
All other inputs
⥠VDD â 0.2 V or ⤠0.2 V
0 to 70°C
â40 to 85°C
Unit
8 ns 10 ns 12 ns 8 ns 10 ns 12 ns
130
105
90
140
115
100
mA
30
25
25
40
35
35
mA
10
20
mA
Rev: 1.10 1/2013
4/13
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, GSI Technology
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