GS74108ATP Datasheet, PDF (8/13 Pages) GSI Technology – 512K x 8 4Mb Asynchronous SRAM

Address
OE
CE
WE
Data In
Data Out
Write Cycle 2: CE control
tWC
tAW
tWR1
tAS
tCW
tWP
tDW
tDH
DATA VALID
HIGH IMPEDANCE
36-Pin SOJ, 400 mil
GS74108ATP/J/X
D
1
e
y
L
c
A
B
B1
Detail A ^Q
Symbol
A
A1
A2
B
B1
c
D
E
e
HE
GE
L
y
Q
Dimension in inch
min nom max
—
— 0.146
0.026 —
—
0.105 0.110 0.115
0.013 0.017 0.021
0.024 0.028 0.032
0.006 0.008 0.012
0.920 0.924 0.929
0.395 0.400 0.405
— 0.05 —
0.430 0.435 0.440
0.354 0.366 0.378
0.082 —
—
—
— 0.004
0^o
—
10^o
Dimension in mm
min nom max
—
— 3.70
0.66 —
—
2.67 2.80 2.92
0.33 0.43 0.53
0.61 0.71 0.81
0.15 0.20 0.30
23.37 23.47 23.60
10.04 10.16 10.28
— 1.27 —
10.93 11.05 11.17
9.00 9.30 9.60
2.08 —
—
—
— 0.10
0^o
—
10^o
Notes:
1. Dimension D& E do not include interlead flash.
2. Dimension B1 does not include dambar protrusion/intrusion.
Rev: 1.07 1/2006
8/13
© 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.