GS74108ATP Datasheet, PDF (4/13 Pages) GSI Technology – 512K x 8 4Mb Asynchronous SRAM

GS74108ATP/J/X
Capacitance
Parameter
Symbol
Test Condition
Input Capacitance
CIN
Output Capacitance
COUT
VIN = 0 V
VOUT = 0 V
Notes:
1. Tested at TA = 25°C, f = 1 MHz
2. These parameters are sampled and are not 100% tested.
DC I/O Pin Characteristics
Parameter
Input Leakage
Current
Output Leakage
Current
Output High Voltage
Output Low Voltage
Symbol
IIL
ILO
VOH
VOL
Test Conditions
VIN = 0 to V_DD
Output High Z
VOUT = 0 to V_DD
IOH = –4 mA
ILO = +4 mA
Max
5
7
Min
– 1 uA
–1 uA
2.4
—
Unit
pF
pF
Max
1 uA
1 uA
—
0.4 V
Power Supply Currents
Parameter Symbol
Test Conditions
Operating
Supply
IDD
Current
CE ≤ VIL
All other inputs
≥ VIH or ≤ VIL
Min. cycle time
IOUT = 0 mA
Standby
Current
ISB1
CE ≥ VIH
All other inputs
≥ VIH or ≤VIL
Min. cycle time
Standby
Current
CE ≥ VDD - 0.2V
ISB2
All other inputs
≥ VDD - 0.2V or ≤ 0.2V
0 to 70°C
8 ns
10 ns
120 mA
95 mA
30 mA
25 mA
10 mA
12 ns
85 mA
22 mA
–40 to 85°C
8 ns
10 ns
12 ns
130 mA 105 mA
95 mA
40 mA
35 mA
32 mA
20 mA
Rev: 1.07 1/2006
4/13
© 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.