GS74116TP Datasheet, PDF (4/14 Pages) GSI Technology – 256K x 16 4Mb Asynchronous SRAM

GS74116TP/J/U
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Supply Voltage for -10/12/15
VDD
3.0
3.3
Supply Voltage for -8
VDD
3.135
3.3
Input High Voltage
VIH
2.0
-
Input Low Voltage
VIL
-0.3
-
Ambient Temperature,
Commercial Range
TAc
0
-
Ambient Temperature,
Industrial Range
TAI
-40
-
Note:
1. Input overshoot voltage should be less than VDD+2V and not exceed 20ns.
2. Input undershoot voltage should be greater than -2V and not exceed 20ns.
Max
3.6
3.6
VDD+0.3
0.8
70
85
Capacitance
Parameter
Symbol Test Condition Max
Unit
Input Capacitance
CIN
VIN=0V
5
pF
Output Capacitance
COUT
VOUT=0V
7
pF
Notes:
1. Tested at TA=25°C, f=1MHz
2. These parameters are sampled and are not 100% tested
DC I/O Pin Characteristics
Parameter
Symbol
Test Conditions
Min
Input Leakage
Current
IIL
VIN = 0 to VDD
-1uA
Output Leakage
Current
ILO
Output High Z
VOUT = 0 to VDD
-1uA
Output High Voltage
VOH
IOH = - 4mA
2.4
Output Low Voltage
VOL
ILO = + 4mA
Unit
V
V
V
V
o_C
o_C
Max
1uA
1uA
0.4V
Rev: 2.02 3/2000
4/14
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
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