GS74116AGP-12I Datasheet, PDF (4/14 Pages) GSI Technology – 256K x 16 4Mb Asynchronous SRAM

DC I/O Pin Characteristics
Parameter
Input Leakage Current
Symbol
IIL
Output Leakage Current
ILO
Output High Voltage
VOH
Output Low Voltage
VOL
Test Conditions
VIN = 0 to V_DD
Output High Z
VOUT = 0 to V_DD
IOH = –4 mA
ILO = +4 mA
Min
– 1 uA
–1 uA
2.4
—
GS74116AGP/X
Max
1 uA
1 uA
—
0.4 V
Power Supply Currents
Parameter Symbol
Operating
Supply
IDD
Current
Standby
Current
ISB1
Standby
Current
ISB2
Test Conditions
CE ≤ VIL
All other inputs
≥ VIH or ≤ VIL
Min. cycle time
IOUT = 0 mA
CE ≥ VIH
All other inputs
≥ VIH or ≤ VIL
Min. cycle time
CE ≥ VDD – 0.2V
All other inputs
≥ VDD – 0.2 V or ≤ 0.2 V
0 to 70°C
–40 to 85°C
Unit
8 ns 10 ns 12 ns 8 ns 10 ns 12 ns
130
105
90
140
115
100
mA
30
25
25
40
35
35
mA
10
20
mA
Rev: 1.10 1/2013
4/13
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, GSI Technology