GS74116AGP-12I Datasheet, PDF (3/14 Pages) GSI Technology – 256K x 16 4Mb Asynchronous SRAM

GS74116AGP/X
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
VDD
–0.5 to +4.6
V
Input Voltage
VIN
–0.5 to V_DD +0.5
(≤ 4.6 V max.)
V
Output Voltage
VOUT
–0.5 to V_DD +0.5
(≤ 4.6 V max.)
V
Allowable power dissipation
PD
0.7
W
Storage temperature
TSTG
–55 to 150
o_C
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage for -8/-10/-12
Input High Voltage
Input Low Voltage
Ambient Temperature,
Commercial Range
Ambient Temperature,
Industrial Range
V_DD
3.0
3.3
3.6
V
VIH
2.0
—
V_DD +0.3
V
VIL
–0.3
—
0.8
V
TAc
0
—
70
o_C
TAI
–40
—
85
o_C
Notes:
1. Input overshoot voltage should be less than V_DD +2 V and not exceed 20 ns.
2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
Capacitance
Parameter
Symbol
Input Capacitance
CIN
Output Capacitance
COUT
Notes:
1. Tested at TA = 25°C, f = 1 MHz
2. These parameters are sampled and are not 100% tested.
Test Condition
VIN = 0 V
VOUT = 0 V
Max
Unit
5
pF
7
pF
Rev: 1.10 1/2013
3/13
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, GSI Technology