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| GS81314PQ36GK-120I Datasheet, PDF (25/39 Pages) GSI Technology – Burst of 2 Multi-Bank ECCRAM | |||
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GS81314PQ18/36GK-133/120/106
I/O Capacitance
Parameter
Input Capacitance
Output Capacitance
Notes:
1. VIN = VDDQ/2.
2. VOUT = VDDQ/2.
3. TA = 25ï°C, f = 1 MHz.
Symbol
Min
CIN
â
COUT
â
Input Electrical Characteristics
Parameter
Symbol
Min
Typ
DC Input Reference Voltage
VREFdc
0.69 * VDDQ
0.70 * VDDQ
DC Input High Voltage (HS)
VIH1dc
VREF + 0.08
VDDQ
DC Input Low Voltage (HS)
VIL1dc
-0.15
0.40 * VDDQ
DC Input High Voltage (LS)
VIH2dc
0.75 * VDDQ
VDDQ
DC Input Low Voltage (LS)
VIL2dc
-0.15
0
AC Input Reference Voltage
VREFac
0.68 * VDDQ
0.70 * VDDQ
AC Input High Voltage (HS)
VIH1ac
VREF + 0.15
VDDQ
AC Input Low Voltage (HS)
VIL1ac
-0.25
0.40 * VDDQ
AC Input High Voltage (LS)
VIH2ac
VDDQ - 0.2
VDDQ
AC Input Low Voltage (LS)
VIL2ac
-0.25
0
Notes:
1. âTypâ parameter applies when Controller ROUTL = 40ï and SRAM RINH = 60ï.
2. VREFac is equal to VREFdc plus noise.
3. VIH max and VIL min apply for pulse widths less than one-quarter of the cycle time.
4. Input rise and fall times must be a minimum of 1V/ns, and within 10% of each other.
5. Parameters apply to High Speed Inputs: CK, CK, KD, KD, SA, D, DINV, R, W, MRW.
6. Parameters apply to Low Speed Inputs: RST, PLL, MZT, PZT.
Max
Units Notes
5.0
pF
1, 3
5.5
pF
2, 3
Max
0.71 * VDDQ
VDDQ + 0.15
VREF - 0.08
VDDQ + 0.15
0.25 * VDDQ
0.72 * VDDQ
VDDQ + 0.25
VREF - 0.15
VDDQ + 0.25
0.2
Units
V
V
V
V
V
V
V
V
V
V
Notes
â
5
1, 5
6
6
2
3~5
1, 3~5
3, 6
3, 6
Rev: 1.09 5/2016
25/39
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2014, GSI Technology
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