GS81314LD19GK-800 Datasheet, PDF(23/39 Page) GSI Technology

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GS81314LD19GK-800 Datasheet, PDF (23/39 Pages) GSI Technology – Burst of 4 Single-Bank ECCRAM

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GS81314LD19/37GK-933/800

Input Signal

Pull-Down Impedance (RINL)

CZT[1:0] = 00

off

R, W, MRW

CZT[1:0] = 01

CZT[1:0] = 10

RT ï± 15%

RT*2 ï± 20%

CZT[1:0] = 11

reserved

DZT[1:0] = 00

off

DZT[1:0] = 01

RT ï± 15%

DZT[1:0] = 10

RT*2 ï± 20%

DZT[1:0] = 11

reserved

Notes:

1. RINL and RINH apply when 105ïï ï£ RT ï£ 135ïï®

2. The mismatch between RINL and RINH is less than 10%, guaranteed by design.

3. All ODT is disabled during JTAG EXTEST and SAMPLE-Z instructions.

Pull-Up Impedance (RINH)

off

RT ï± 15%

RT*2 ï± 20%

reserved

off

RT ï± 15%

RT*2 ï± 20%

reserved

Note: When ODT impedance is enabled on a particular input, that input should always be driven High or Low; it should never be

tri-stated (i.e., in a High- Z state). If the input is tri-stated, the ODT will pull the signal to VDDQ / 2 (i.e., to the switch point of the

diff-amp receiver), which could cause the receiver to enter a meta-stable state and consume more power than it normally would.

This could result in the deviceâs operating currents being higher.

Rev: 1.02 3/2016

23/39

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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