GS81332QT19CE-350M Datasheet, PDF (18/30 Pages) GSI Technology – Rad-Hard SRAM 288Mb/144Mb/72Mb Burst of 2 SigmaQuad-II+TM

Operating Currents
Parameter
Symbol
Test Conditions
Operating Current (x36): DDR
I_DD
V_DD = Max, I_OUT = 0 mA
Cycle Time t_KHKH Min
Operating Current (x18): DDR
I_DD
V_DD = Max, I_OUT = 0 mA
Cycle Time t_KHKH Min
Standby Current (NOP): DDR
I_SB1
Device deselected,
I_OUT = 0 mA, f = Max,
All Inputs 0.2 V or V_DD – 0.2 V
Notes:
1. Power measured with output pins floating.
2. Minimum cycle, I_OUT = 0 mA
3. Operating current is calculated with 50% read cycles and 50% write cycles.
4. Standby Current is only after all pending read and write burst operations are completed.
Preliminary
GS82612QT19/37CE-350M/250M
GS81332QT19/37CE-350M/250M
GS8692QT19/37CE-350M/250M
-350M
-250M
–55
–55
Unit
to
to
125°C
125°C
1430
1140
mA
2, 3
1280
1030
mA
2, 3
590
520
mA
2, 4
Rev: 1.01 7/2017
18/30
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2017, GSI Technology