GS81302D08GE-300 Datasheet, PDF (18/34 Pages) GSI Technology – 144Mb SigmaQuadTM-II Burst of 4 SRAM

GS81302D08/09/18/36E-375/350/333/300/250
Operating Currents
-375
-350
Parameter Symbol
Test Conditions
0
–40
0
–40
to
to
to
to
70°C 85°C 70°C 85°C
Operating Current
(x36): DDR
I_DD
V_DD = Max, I_OUT = 0 mA
Cycle Time t_KHKH Min
1105 1115 1055 1065
mA mA mA mA
Operating Current
(x18): DDR
I_DD
V_DD = Max, I_OUT = 0 mA
Cycle Time t_KHKH Min
995 1005 940 950
mA mA mA mA
Operating Current
(x9): DDR
I_DD
V_DD = Max, I_OUT = 0 mA
Cycle Time t_KHKH Min
995 1005 940 950
mA mA mA mA
Operating Current
(x8): DDR
I_DD
V_DD = Max, I_OUT = 0 mA
Cycle Time t_KHKH Min
995 1005 940 950
mA mA mA mA
Standby Current
(NOP): DDR
Device deselected,
I_SB1
I_OUT = 0 mA, f = Max,
All Inputs 0.2 V or V_DD – 0.2 V
310
mA
320
mA
295
mA
305
mA
Notes:
1. Power measured with output pins floating.
2. Minimum cycle, I_OUT = 0 mA
3. Operating current is calculated with 50% read cycles and 50% write cycles.
4. Standby Current is only after all pending read and write burst operations are completed.
-333
0
–40
to
to
70°C 85°C
1000 1010
mA mA
890 900
mA mA
890 900
mA mA
890 900
mA mA
275 285
mA mA
-300
0
–40
to
to
70°C 85°C
915 925
mA mA
815 825
mA mA
815 825
mA mA
815 825
mA mA
265 275
mA mA
-250
0
–40 ^Notes
to
to
70°C 85°C
790
mA
800
mA
2, 3
700
mA
710
mA
2, 3
700
mA
710
mA
2, 3
700
mA
710
mA
2, 3
250
mA
260
mA
2, 4
Rev: 1.04c 8/2017
18/34
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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