GS881Z18T Datasheet, PDF (16/34 Pages) GSI Technology – 8Mb Pipelined and Flow Through Synchronous NBT SRAMs

Preliminary.
GS881Z18/36T-11/100/80/66
Undershoot Measurement and Timing
V_IH
V_SS
50%
V_SS – 2.0 V
20% tKC
Overshoot Measurement and Timing
V_DD + 2.0 V
50%
20% tKC
V_DD
V_IL
Capacitance
(T_A = 25^oC, f = 1 MHZ, V_DD = 3.3 V)
Parameter
Symbol
Input Capacitance
C_IN
Input/Output Capacitance
C_I/O
Note: These parameters are sample tested.
Test conditions
V_IN = 0 V
V_OUT = 0 V
Typ. Max. Unit
4
5
pF
6
7
pF
Package Thermal Characteristics
Rating
Layer Board Symbol
Max
Unit Notes
Junction to Ambient (at 200 lfm)
single
R_ΘJA
40
°C/W
1,2
Junction to Ambient (at 200 lfm)
four
R_ΘJA
24
°C/W
1,2
Junction to Case (TOP)
—
R_ΘJC
9
°C/W
3
Notes:
1. Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temper-
ature air flow, board density, and PCB thermal resistance.
2. SCMI G-38-87
3. Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1
Rev: 1.10 8/2000
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Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
© 1998, Giga Semiconductor, Inc.