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GS816018C Datasheet, PDF (14/22 Pages) GSI Technology – 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
DC Electrical Characteristics
Parameter
Input Leakage Current
(except mode pins)
ZZ Input Current
FT Input Current
Output Leakage Current
Output High Voltage
Output High Voltage
Output Low Voltage
Symbol
IIL
IIN1
IIN2
IOL
VOH2
VOH3
VOL
Preliminary
GS816018/36CT-333/300/250
Test Conditions
VIN = 0 to VDD
VDD ≥ VIN ≥ VIH
0 V ≤ VIN ≤ VIH
VDD ≥ VIN ≥ VIL
0 V ≤ VIN ≤ VIL
Output Disable, VOUT = 0 to VDD
IOH = –8 mA, VDDQ = 2.375 V
IOH = –8 mA, VDDQ = 3.135 V
IOL = 8 mA
Min
–1 uA
–1 uA
–1 uA
–100 uA
–1 uA
–1 uA
1.7 V
2.4 V
—
Max
1 uA
1 uA
100 uA
1 uA
1 uA
1 uA
—
—
0.4 V
Rev: 1.00 9/2004
14/22
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2004, GSI Technology