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GS81302QT19E-250I Datasheet, PDF (14/28 Pages) GSI Technology – JEDEC-standard pinout and package
GS81302QT07/10/19/37E-318/300/250/200
Programmable Impedance HSTL Output Driver DC Electrical Characteristics
Parameter
Symbol
Min.
Output High Voltage
VOH1
VDDQ/2 – 0.12
Output Low Voltage
VOL1
VDDQ/2 – 0.12
Output High Voltage
VOH2
VDDQ – 0.2
Output Low Voltage
VOL2
Vss
Notes:
1. IOH = (VDDQ/2) / (RQ/5) +/– 15% @ VOH = VDDQ/2 (for: 175 RQ  350
2. IOL = (VDDQ/2) / (RQ/5) +/– 15% @ VOL = VDDQ/2 (for: 175  RQ 350.
3. Parameter tested with RQ = 250 and VDDQ = 1.5 V
4. 0RQ  
5. IOH = –1.0 mA
6. IOL = 1.0 mA
Max.
VDDQ/2 + 0.12
VDDQ/2 + 0.12
VDDQ
0.2
Units
V
V
V
V
Notes
1, 3
2, 3
4, 5
4, 6
Operating Currents
-318
Parameter
Symbol
Test Conditions
0
–40
to
to
70°C
85°C
Operating Current
(x36): DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time tKHKH Min
1440 mA 1450 mA
Operating Current
(x18): DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time tKHKH Min
1265 mA 1275 mA
Operating Current
(x9): DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time tKHKH Min
1265 mA 1275 mA
Operating Current
(x8): DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time tKHKH Min
1265 mA 1275 mA
Standby Current
(NOP): DDR
Device deselected,
ISB1
IOUT = 0 mA, f = Max,
310 mA 320 mA
All Inputs 0.2 V or VDD – 0.2 V
Notes:
1. Power measured with output pins floating.
2. Minimum cycle, IOUT = 0 mA
3. Operating current is calculated with 50% read cycles and 50% write cycles.
4. Standby Current is only after all pending read and write burst operations are completed.
-300
-250
0
–40
0
–40
to
to
to
to
70°C 85°C 70°C 85°C
1330 mA 1340 mA 1130 mA 1140 mA
1250 mA 1260 mA 1060 mA 1070 mA
1250 mA 1260 mA 1060 mA 1070 mA
1250 mA 1260 mA 1060 mA 1070 mA
295 mA 305 mA 275 mA 285 mA
-200
0
–40
to
to
70°C 85°C
930 mA 940 mA
875 mA 885 mA
875 mA 885 mA
875 mA 885 mA
255 mA 265 mA
Notes
2, 3
2, 3
2, 3
2, 3
2, 4
Rev: 1.00e 8/2017
14/28
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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