GS816272C Datasheet, PDF (13/31 Pages) GSI Technology – 256K x 72 18Mb Sync Burst SRAMs

GS816272C
Operating Currents
-200
-166
-150
-133
Parameter Test Conditions
Mode
Symbol ^{0 –40 0 –40 0 –40 0 –40} Unit
to to to to to to to to
70°C 85°C 70°C 85°C 70°C 85°C 70°C 85°C
Operating
Current
3.3 V
Device Selected;
All other inputs
Pipeline
I_DD
I_DDQ
290
60
300
60
250
50
260
50
225
45
235
45
205
40
215
40
mA
≥V_IH or ≤ V_IL
Output open
(x72)
Flow
Through
I_DD
I_DDQ
195
30
205
30
185
30
195
30
180
30
190
30
165
20
175
20
mA
Operating
Current
2.5 V
Device Selected;
All other inputs
Pipeline
I_DD
I_DDQ
290
45
300
45
250
40
260
40
225
35
235
35
205
30
215
30
mA
≥V_IH or ≤ V_IL
Output open
(x72)
Flow
Through
I_DD
I_DDQ
195
30
205
30
185
30
195
30
180
30
190
30
165
20
175
20
mA
Pipeline
I_SB
20
30
20
30
20
30
20
30
mA
Standby
Current
ZZ ≥ V_DD – 0.2 V
—
Flow
Through
I_SB
20
30
20
30
20
30
20
30
mA
Device Deselected;
Pipeline
I_DD
75
80
64
70
60
65
50
55
mA
Deselect
Current
All other inputs
≥ V_IH or ≤ V_IL
—
Flow
Through
I_DD
50
55
50
55
50
55
45
50
mA
Notes:
1. I_DD and I_DDQ apply to any combination of V_DD3, V_DD2, V_DDQ3, and V_DDQ2 operation.
2. All parameters listed are worst case scenario.
Rev: 2.18 11/2005
13/31
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, GSI Technology