SSF6646 Datasheet, PDF (2/4 Pages) Silikron Semiconductor Co.,LTD. – High Power and current handing capability

SSF6646
60V Dual N-Channel MOSFET
Zero Gate Voltage Drain Current
IDSS
VDS=48V,VGS=0V
1
μA
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
IG SS
VGS=±20V,VDS=0V
±100
nA
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
VGS(th)
RDS(O N)
gFS
VDS=VGS,ID=250μA
1
3
V
VGS=4.5V, ID=3A
50
75
mΩ
VGS=10V, ID=4.5A
44
60
mΩ
VDS=5V,ID=4.5A
5
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
700
PF
Coss
VDS=25V,VGS=0V,
F=1.0MHz
100
PF
Crss
50
PF
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
td(on)
13
nS
tr
VDS=30V,VGS=10V,RGEN=3Ω
10
nS
td(off)
ID=4.5A
30
nS
Turn-Off Fall Time
tf
6
nS
Total Gate Charge
Gate-Source Charge
Qg
15
nC
Qgs
VDS=48V,ID=4.5A,VGS=10V
2
nC
Gate-Drain Charge
Qgd
DRAIN-SOURCE DIODE CHARACTERISTICS
4
nC
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=1.7A
0.8
1.2
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in² FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
www.goodark.com
Page 2 of 4
Rev.1.1