SSF6646 Datasheet, PDF (1/4 Pages) Silikron Semiconductor Co.,LTD. – High Power and current handing capability

SSF6646
60V Dual N-Channel MOSFET
DESCRIPTION
The SSF6646 uses advanced trench
technology to provide excellent RDS(ON)
and low gate charge.
GENERAL FEATURES
● VDS = 60V,ID =4.5A
RDS(ON) <75mΩ @ VGS=4.5V
RDS(ON) <60mΩ @ VGS=10V
● High Power and current handing capability
● Lead free product
● Surface Mount Package
Schematic Diagram
Marking and Pin Assignment
APPLICATIONS
●PWM applications
●Load switch
●Power management
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSF6646
SSF6646
SOP-8
Ø330mm
SOP-8 Top view
Tape Width
12mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID(25℃)
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID(70℃)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
60
±20
5
4.3
25
2.4
-55 To 175
Unit
V
V
A
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
62.5
℃/W
ELECTRICAL CHARACTERISTICS (T_A=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Min Typ Max Unit
60
V
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