|
SSF3341 Datasheet, PDF (1/7 Pages) Silikron Semiconductor Co.,LTD. – Advanced MOSFET process technology | |||
|
Main Product Characteristics
VDSS
-30V
RDS(on) 42mΩ (typ.)
ID
-4.2A â
SOT-23
Features and Benefits
ï® Advanced MOSFET process technology
ï® Special designed for PWM, load switching and
general purpose applications
ï® Ultra low on-resistance with low gate charge
ï® Fast switching and reverse body recovery
ï® 150â operating temperature
ï® Lead free product
SSF3341
30V P-Channel MOSFET
D
G
Marking and Pin
Assignment
S
Schematic Diagram
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating @TA=25â unless otherwise specified
Symbol
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
VDS
VGS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current â¡
Power Dissipation â¢
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Max.
-4.2 â
-3.5 â
-30
1.4
-30
±12
-55 to +150
Units
A
W
V
V
°C
Thermal Resistance
Symbol
RθJA
Characteristics
Junction-to-ambient (t ⤠10s) â£
www.goodark.com
Page 1 of 7
Typ.
â
Max.
90
Units
°C /W
Rev.2.2
|
▷ |