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GA50SICP12-227 Datasheet, PDF (9/9 Pages) GeneSiC Semiconductor, Inc. – Transistor/Schottky Diode Co-pack
GA50SICP12-227
SPICE Model Parameters
This is a secure document. Please copy this code from the SPICE model PDF file on our website
(http://www.genesicsemi.com/images/products_sic/igbt_copack/GA50SICP12-227_spice.pdf) into
LTSPICE (version 4) software for simulation of the GA50SICP12-227.
*
MODEL OF GeneSiC Semiconductor Inc.
*
$Revision: 1.1
$
*
$Date:
23-JUN-2014
$
*
*
GeneSiC Semiconductor Inc.
*
43670 Trade Center Place Ste. 155
*
Dulles, VA 20166
*
http://www.genesicsemi.com/index.php/sic-products/copack
*
*
COPYRIGHT (C) 2014 GeneSiC Semiconductor Inc.
*
ALL RIGHTS RESERVED
*
* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY
* OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED
* TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A
* PARTICULAR PURPOSE."
* Models accurate up to 2 times rated drain current.
*
* Start of GA50SICP12-227 SPICE Model
*
.SUBCKT GA50SIPC12 DRAIN GATE SOURCE
Q1 DRAIN GATE SOURCE GA50SIPC12_Q
D1 SOURCE DRAIN GA50SIPC12_D1
D2 SOURCE DRAIN GA50SIPC12_D2
*
.model GA50SIPC12_Q NPN
+ IS
5.00E-47
ISE
1.26E-28
EG
3.2
+ BF
100
BR
0.55
IKF
3500
+ NF
1
NE
2
RB
0.9
+ RE
0.01
RC
0.011
CJC
1.75E-09
+ VJC
3
MJC
0.5
CJE
5.57E-09
+ VJE
3
MJE
0.5
XTI
3
+ XTB
-1.2
TRC1
7.00E-03
MFG GeneSiC_Semi
.MODEL GA50SIPC12_D1 D
+ IS
1.99E-16
RS
0.015652965
N
1
+ IKF
+ TRS1
1000
0.0042
EG
TRS2
1.2
1.3E-05
XTI
3
CJO
3.86E-09
+ VJ
1.362328465
M
0.48198551
FC
0.5
+ TT
1.00E-10
IAVE
50
.MODEL GA50SIPC12_D2 D
+ IS
1.54E-19
RS
0.1
N
3.941
+ EG
3.23
TRS1
-0.004
IKF
19
+ XTI
0
FC
0.5
TT
0
.ENDS
* End of GA50SICP12-227 SPICE Model
June 2014
http://www.genesicsemi.com/commercial-sic/sic-modules-copack/
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