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| GA50SICP12-227 Datasheet, PDF (2/9 Pages) GeneSiC Semiconductor, Inc. – Transistor/Schottky Diode Co-pack | |||
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GA50SICP12-227
Electrical Characteristics at Tj = 175 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
min. typ. max.
SJT On-State Characteristics
Drain â Source On Resistance
Gate Forward Voltage
DC Current Gain
RDS(ON)
VGS(FWD)
hFE
ID = 50 A, IG = 1000 mA, Tj = 25 °C
ID = 50 A, IG = 2000 mA, Tj = 125 °C
ID = 50 A, IG = 4000 mA, Tj = 175 °C
IG = 500 mA, Tj = 25 °C
IG = 500 mA, Tj = 175 °C
VDS = 5 V, ID = 50 A, Tj = 25 °C
VDS = 5 V, ID = 50 A, Tj = 175 °C
25
30
44
3.3
3.1
100
TBD
SJT Off-State Characteristics
Drain Leakage Current
Gate Leakage Current
VR = 1200 V, VGS = 0 V, Tj = 25 °C
18
IDSS
VR = 1200 V, VGS = 0 V, Tj = 125 °C
26
VR = 1200 V, VGS = 0 V, Tj = 175 °C
35
ISG
VSG = 20 V, Tj = 25 °C
20
SJT Capacitance Characteristics
Input Capacitance
Ciss
VGS = 0 V, VD = 1 V, f = 1 MHz
tbd
Reverse Transfer/Output Capacitance
Crss/Coss
VD = 1 V, f = 1 MHz
tbd
SJT Switching Characteristics
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Turn-On Energy Per Pulse
Turn-Off Energy Per Pulse
Total Switching Energy
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Turn-On Energy Per Pulse
Turn-Off Energy Per Pulse
Total Switching Energy
td(on)
tbd
tr
VDD = 800 V, ID = 50 A,
tbd
td(off)
tf
Eon
RG(on) = RG(off) = tbd â¦,
FWD = GB50SLT12,
Tj = 25 ºC
Refer to Figure 15 for gate current
tbd
tbd
tbd
Eoff
waveform
tbd
Ets
tbd
td(on)
tbd
tr
VDD = 800 V, ID = 50 A,
tbd
td(off)
tf
Eon
RG(on) = RG(off) = tbd â¦,
FWD = GB50SLT12,
Tj = 175 ºC
Refer to Figure 15 for gate current
tbd
tbd
tbd
Eoff
waveform
tbd
Ets
tbd
Free-wheeling Silicon Carbide Schottky Diode
Forward Voltage
Diode Knee Voltage
Peak Reverse Recovery Current
Reverse Recovery Time
Rise Time
Fall Time
Turn-On Energy Loss Per Pulse
Turn-Off Energy Loss Per Pulse
Reverse Recovery Charge
Rise Time
Fall Time
Turn-On Energy Loss Per Pulse
Turn-Off Energy Loss Per Pulse
Reverse Recovery Charge
VF
IF = 50 A, VGE = 0 V,
Tj = 25 ºC (175 ºC )
1.5
VD(knee)
Tj = 25 ºC, IF = 1 mA
0.8
Irrm
IF = 50 A, VGE = 0 V, VR = 800 V,
tbd
trr
-dIF/dt = 625 A/µs, Tj = 175 ºC
tbd
tr
tbd
tf
Eon
Eoff
VDD= 800 V, ID = 50 A,
Rgon = Rgoff = tbd â¦,
, Tj= 25 ºC
tbd
tbd
tbd
Qrr
tbd
tr
tbd
tf
VDD= 800 V, ID = 50 A,
tbd
Eon
Rgon = Rgoff = tbd â¦,
tbd
Eoff
Tj= 175 ºC
tbd
Qrr
tbd
Unit
mâ¦
V
μA
nA
pF
pF
ns
ns
ns
ns
µJ
µJ
µJ
ns
ns
ns
µJ
µJ
µJ
V
V
A
ns
ns
ns
μJ
μJ
nC
ns
ns
μJ
μJ
nC
Aug 2014
http://www.genesicsemi.com/commercial-sic/sic-modules-copack/
Pg 2 of 8
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