GB02SLT12-214 Datasheet, PDF (5/5 Pages) GeneSiC Semiconductor, Inc. – Silicon Carbide Power Schottky Diode

GB02SLT12-214
SPICE Model Parameters
Copy the following code into a SPICE software program for simulation of the GB02SLT12-214 device.
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MODEL OF GeneSiC Semiconductor Inc.
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$Revision: 1.0
$
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$Date: 09-SEP-2013
$
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GeneSiC Semiconductor Inc.
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43670 Trade Center Place Ste. 155
*
Dulles, VA 20166
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http://www.genesicsemi.com/index.php/sic-products/schottky
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COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc.
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ALL RIGHTS RESERVED
*
* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY
* OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED
* TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A
* PARTICULAR PURPOSE."
* Models accurate up to 2 times rated drain current.
*
* Start of GB02SLT12-214 SPICE Model
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.SUBCKT GB02SLT12 ANODE KATHODE
D1 ANODE KATHODE GB02SLT12
D2 ANODE KATHODE GB02SLT12_PIN
.MODEL GB02SLT12 D
+ IS
2.05E-15
RS
0.282
+ TRS1
0.0054
TRS2
3E-05
+N
1
IKF
251
+ EG
1.2
XTI
-1.8
+ CJO
1.61E-10
VJ
0.4508
+M
1.586
FC
0.5
+ TT
1.00E-10
BV
1200
+ IBV
1.00E-03
VPK
1200
+ IAVE
2
TYPE
SiC_Schottky
+ MFG
GeneSiC_Semi
.MODEL GB02SLT12_PIN D
+ IS
1.54E-25
RS
0.39
+ TRS1
+ EG
-0.003
3.23
N
3.941
IKF
19
+ XTI
0
FC
0.5
+ TT
0
BV
1200
+ IBV
1.00E-03
VPK
1200
+ IAVE
10
TYPE
SiC_PiN
.ENDS
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* End of GB02SLT12-214 SPICE Model
Nov 2013
http://www.genesicsemi.com/index.php/sic-products/schottky
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