GB02SLT12-214 Datasheet, PDF (2/5 Pages) GeneSiC Semiconductor, Inc. – Silicon Carbide Power Schottky Diode

GB02SLT12-214
Figure 1: Typical Forward Characteristics
Figure 2: Typical Reverse Characteristics
Figure 3: Power Derating Curve
Figure 4: Current Derating Curves (D = t_P/T, t_P= 400 µs)
(Considering worst case Z_th conditions )
Figure 5: Typical Junction Capacitance vs Reverse Voltage
Characteristics
Figure 6: Typical Switching Energy vs Reverse Voltage
Characteristics
Aug 2014
http://www.genesicsemi.com/index.php/sic-products/schottky
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