GB01SHT12-CAU Datasheet, PDF (3/3 Pages) GeneSiC Semiconductor, Inc. – Silicon Carbide Power Schottky Diode Chip

GB01SHT12-CAU
SPICE Model Parameters
Copy the following code into a SPICE software program for simulation of the GB01SHT12-CAU device.
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MODEL OF GeneSiC Semiconductor Inc.
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$Revision: 1.0
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$Date: 05-SEP-2013
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GeneSiC Semiconductor Inc.
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43670 Trade Center Place Ste. 155
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Dulles, VA 20166
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httphttp://www.genesicsemi.com/index.php/sic-products/schottky
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COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc.
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ALL RIGHTS RESERVED
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* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY
* OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED
* TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A
* PARTICULAR PURPOSE."
* Models accurate up to 2 times rated drain current.
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* Start of GB01SHT12-CAU SPICE Model
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.SUBCKT GB01SHT12 ANODE KATHODE
R1 ANODE INT R=((TEMP-24)*0.0099); Temperature Dependant Resistor
D1 INT KATHODE GB01SHT12_25C; Call the 25C Diode Model
D2 ANODE KATHODE GB01SHT12_PIN; Call the PiN Diode Model
.MODEL GB01SHT12_25C D
+ IS
1.88E-18
RS
0.9255
+N
1
IKF
98.29122743
+ EG
1.2
XTI
3
+ CJO
7.90E-11
VJ
0.367
+M
1.63
FC
0.5
+ TT
1.00E-10
BV
1500
+ IBV
1.00E-03
VPK
1200
+ IAVE
1
TYPE
SiC_Schottky
+ MFG
GeneSiC_Semiconductor
.MODEL GB01SHT12_PIN D
+ IS
2.76E-16
RS
0.84243
+N
+ EG
3.791461
3.23
IKF
2.98675
XTI
30
+ FC
0.5
TT
0
+ BV
1500
IBV
1.00E-03
+ VPK
1200
IAVE
1
+ TYPE
SiC_PiN
.ENDS
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* End of GB01SHT12-CAU SPICE Model
Sep 2013
http://www.genesicsemi.com/index.php/hit-sic/baredie
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