GB01SHT12-CAU Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Silicon Carbide Power Schottky Diode Chip

Electrical Datasheet*
Silicon Carbide Power
Schottky Diode Chip
Features
 1200 V Schottky rectifier
 250 °C maximum operating temperature
 Temperature independent switching behavior
 Superior surge current capability
 Positive temperature coefficient of V_F
 Extremely fast switching speeds
 Superior figure of merit Q_C/I_F
GB01SHT12-CAU
Maximum Ratings at T_j = 250 °C, unless otherwise specified
Parameter
Symbol
Repetitive peak reverse voltage
Continuous forward current
RMS forward current
Operating and storage temperature
V_RRM
I_F
I_F(RMS)
T_j , T_stg
Conditions
T_C ≤ 235 °C
T_C ≤ 235 °C
Values
Unit
1200
V
1
A
2
A
-55 to 250
°C
Electrical Characteristics at T_j = 250 °C, unless otherwise specified
Parameter
Symbol
Conditions
Diode forward voltage
Reverse current
Total capacitive charge
Switching time
Total capacitance
V_F
I_F = 1 A, T_j = 25 °C
I_F = 1 A, T_j = 210 °C
I_R
V_R = 1200 V, T_j = 25 °C
V_R = 1200 V, T_j = 275 °C
Q_C
t_s
I_F ≤ I_F,MAX
dI_F/dt = 200 A/μs
T_j = 210 °C
V_R = 400 V
V_R = 960 V
V_R = 400 V
V_R = 960 V
V_R = 1 V, f = 1 MHz, T_j = 25 °C
C
V_R = 400 V, f = 1 MHz, T_j = 25 °C
V_R = 1000 V, f = 1 MHz, T_j = 25 °C
min.
Values
typ.
1.96
3.1
0.1
6.6
6
11
< 17
66
10
8
max.
10
30
Unit
V
µA
nC
ns
pF
Thermal Characteristics
Thermal resistance, junction - case
R_thJC
Assuming TO-276 package
3.55
°C/W
*For chip size and metallization, please refer to the mechanical datasheet (must have a non-disclosure agreement with GeneSiC
Semiconductor).
April 2012
http://www.genesicsemi.com/index.php/hit-sic/baredie
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