GB50SLT06-CAL Datasheet, PDF (1/4 Pages) GeneSiC Semiconductor, Inc. – Silicon Carbide Power Schottky Diode Chip

Silicon Carbide Power
Schottky Diode Chip
Die Datasheet*
Features
 600 V Schottky rectifier
 175°C maximum operating temperature
 Positive temperature coefficient of V_F
 Fast switching speeds
 Superior figure of merit Q_C/I_F
GB50SLT06-CAL
VRRM
= 600 V
VF
= 1.6 V
IF (Tc=25°C) = 100 A
QC
= 158 nC
Advantages
 Improved circuit efficiency (Lower overall cost)
 Significantly reduced switching losses compare to Si PiN
diodes
 Ease of paralleling devices without thermal runaway
 Smaller heat sink requirements
 Low reverse recovery current
 Low device capacitance
Applications
 Down Hole Oil Drilling, Geothermal Instrumentation
 High Voltage Multipliers
 Military Power Supplies
Maximum Ratings at Tj = 175 °C, unless otherwise specified
Parameter
Symbol
Conditions
Repetitive peak reverse voltage
Continuous forward current
Continuous forward current
RMS forward current
Surge non-repetitive forward current, Half Sine
Wave
Non-repetitive peak forward current
I²t value
Power dissipation
Operating and storage temperature
V_RRM
I_F
I_F
I_F(RMS)
I_F,SM
I_F,max
∫i² dt
P_tot
T_j , T_stg
TC = 25 °C
TC ≤ 135 °C
TC ≤ 135 °C
TC = 25 °C, tP = 10 ms
TC = 135 °C, tP = 10 ms
TC = 25 °C, tP = 10 µs
TC = 25 °C, tP = 10 ms
TC = 25 °C
Values
1200
100
50
87
350
313
1625
tbd
620
-55 to 175
Electrical Characteristics at Tj = 175 °C, unless otherwise specified
Parameter
Symbol
Conditions
Diode forward voltage
Reverse current
Total capacitive charge
Switching time
Total capacitance
V_F
IF = 50 A, Tj = 25 °C
IF = 50 A, Tj = 175 °C
I_R
VR = 1200 V, Tj = 25 °C
VR = 1200 V, Tj = 175 °C
Q_C
t_s
IF ≤ IF,MAX
dIF/dt = 200 A/μs
Tj = 175 °C
VR = 400 V
VR = 400 V
C
VR = 1 V, f = 1 MHz, Tj = 25 °C
VR = 400 V, f = 1 MHz, Tj = 25 °C
min.
1.35
2.05
Values
typ.
1.6
2.6
200
400
158
50
2940
203
max.
1.8
3.0
1000
3000
Unit
V
A
A
A
A
A
A²S
W
°C
Unit
V
µA
nC
ns
pF
*For chip size and metallization, please refer to the mechanical datasheet (must have a non-disclosure agreement with GeneSiC
Semiconductor).
Sep 2014
http://www.genesicsemi.com/index.php/hit-sic/baredie
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