GA50JT06-CAL Datasheet, PDF (1/7 Pages) GeneSiC Semiconductor, Inc. – Normally – OFF Silicon Carbide Junction Transistor

Die Datasheet
GA50JT06-CAL
Normally – OFF Silicon Carbide
Junction Transistor
Features
 250°C maximum operating temperature
 Gate Oxide Free SiC switch
 Exceptional Safe Operating Area
 Excellent Gain Linearity
 Temperature Independent Switching Performance
 Low Output Capacitance
 Positive Temperature Co-efficient of R_DS,ON
 Suitable for connecting an anti-parallel diode
Advantages
 Compatible with Si MOSFET/IGBT gate-drivers
 > 20 µs Short-Withstand Capability
 Lowest-in-class Conduction Losses
 High Circuit Efficiency
 Minimal Input Signal Distortion
 High Amplifier Bandwidth
Electrical Specifications
V_DS
=
R_DS(ON)
=
I_{D (Tc = 25°C)} =
h_{FE (Tc = 25°C)} =
600 V
25 mΩ
100 A
105
Applications
 Down Hole Oil Drilling, Geothermal Instrumentation
 Hybrid Electric Vehicles (HEV)
 Solar Inverters
 Switched-Mode Power Supply (SMPS)
 Power Factor Correction (PFC)
 Induction Heating
 Uninterruptible Power Supply (UPS)
 Motor Drives
Absolute Maximum Ratings
Parameter
Drain – Source Voltage
Continuous Drain Current
Gate Peak Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
Reverse Gate – Source Voltage
Reverse Drain – Source Voltage
Operating and Storage Temperature
Symbol
V_DS
I_D
I_GM
RBSOA
SCSOA
V_GS
V_DS
T_j, T_stg
Conditions
V_GS = 0 V
T_VJ < 250 °C
T_VJ = 250 ^oC, I_G = 1 A,
Clamped Inductive Load
T_VJ = 250 ^oC, I_G = 1 A, V_DS = 400 V,
Non Repetitive
Values
600
50
10
I_D,max = 50
@ V_DS ≤ V_DSmax
20
30
25
-55 to 250
Unit
V
A
A
A
µs
V
V
°C
Electrical Characteristics
Parameter
Symbol
Conditions
Values
min. typ. max.
Unit
On Characteristics
Drain – Source On Resistance
Gate Forward Voltage
DC Current Gain
R_DS(ON)
I_D = 50 A, I_G = 1000 mA, T_j = 25 °C
I_D = 50 A, I_G = 1000 mA, T_j = 125 °C
I_D = 50 A, I_G = 2000 mA, T_j = 175 °C
25
39
43
mΩ
I_D = 50 A, I_G = 2000 mA, T_j = 250 °C
62
V_GS(FWD)
I_G = 1000 mA, T_j = 25 °C
I_G = 1000 mA, T_j = 250 °C
2.9
2.6
V
V_DS = 5 V, I_D = 50 A, T_j = 25 °C
105
β
V_DS = 5 V, I_D = 50 A, T_j = 125 °C
V_DS = 5 V, I_D = 50 A, T_j = 175 °C
77
71
V_DS = 5 V, I_D = 50 A, T_j = 250 °C
69
Off Characteristics
Drain Leakage Current
Gate – Source Leakage Current
I_DSS
V_R = 600 V, V_GS = 0 V, T_j = 25 °C
V_R = 600 V, V_GS = 0 V, T_j = 250 °C
10
100
µA
I_GSS
V_GS = -20 V, T_j = 25 °C
20
nA
Capacitance Characteristics
Input Capacitance
C_iss
V_GS = 0 V, V_D = 100 V, f = 1 MHz
6440
pF
Reverse Transfer/Output Capacitance
C_rss/C_oss
V_D = 100 V, f = 1 MHz
420
pF
August 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
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