MMBT3906 Datasheet, PDF (3/3 Pages) NXP Semiconductors – PNP switching transistor

MMBT3906
ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
SYMBOL
MIN.
MAX.
UNIT
Voltage Feedback Ratio
at ÐVCE = 10 V, ÐIC = 1 mA, f = 1 kHz
Small Signal Current Gain
at ÐVCE = 10 V, ÐIC = 1 mA, f = 1 kHz
Output Admittance
at ÐVCE = 1 V, ÐIC = 1 mA, f = 1 kHz
Noise Figure
at ÐVCE = 5 V, ÐIC = 100 mA, RG = 1 kW,
f = 10 É 15 000 Hz
Delay Time (see Fig. 1)
at ÐIB1 = 1 mA, ÐIC = 10 mA
Rise Time (see Fig. 1)
at ÐIB1 = 1 mA, ÐIC = 10 mA
Storage Time (see Fig. 2)
at IB1 = ÐIB2 = 1 mA, ÐIC = 10 mA
Fall Time (see Fig. 2)
at IB1 = ÐIB2 = 1 mA, ÐIC = 10 mA
hre
0.5 á 10^Ð4
8 á 10^Ð4
Ð
hfe
100
400
Ð
hoe
1
40
mS
NF
Ð
4
dB
td
Ð
35
ns
tr
Ð
35
ns
ts
Ð
225
ns
tf
Ð
75
ns
Fig. 1: Test circuit for delay and rise time
* total shunt capacitance of test jig and connectors
0.30 (7.5)
0.12 (3)
0.59 (15)
0.03 (0.8)
0.47 (12)
0.2 (5)
.04 (1) _{.08 (2)}
.04 (1)
.08 (2)
0.06 (1.5)
0.20 (5.1)
Dimensions in inches and (millimeters)
Fig. 2: Test circuit for storage and fall time
* total shunt capacitance of test jig and connectors