MMBT3906 Datasheet, PDF (2/3 Pages) NXP Semiconductors – PNP switching transistor

MMBT3906
ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
Collector-Base Breakdown Voltage
at ÐIC = 10 mA, IE = 0
Collector-Emitter Breakdown Voltage
at ÐIC = 1 mA, IB = 0
Emitter-Base Breakdown Voltage
at ÐIE = 10 mA, IC = 0
Collector Saturation Voltage
at ÐIC = 10 mA, ÐIB = 1 mA
at ÐIC = 50 mA, ÐIB = 5 mA
Base Saturation Voltage
at ÐIC = 10 mA, ÐIB = 1 mA
at ÐIC = 50 mA, ÐIB = 5 mA
Collector-Emitter Cutoff Current
at ÐVEB = 3 V, ÐVCE = 30 V
Emitter-Base Cutoff Current
at ÐVEB = 3 V, ÐVCE = 30 V
DC Current Gain
at ÐVCE = 1 V, ÐIC = 0.1 mA
at ÐVCE = 1 V, ÐIC = 1 mA
at ÐVCE = 1 V, ÐIC = 10 mA
at ÐVCE = 1 V, ÐIC = 50 mA
at ÐVCE = 1 V, ÐIC = 100 mA
Input Impedance
at ÐVCE = 10 V, ÐIC = 1 mA, f = 1 kHz
Gain-Bandwidth Product
at ÐVCE = 20 V, ÐIC = 10 mA, f = 100 MHz
Collector-Base Capacitance
at ÐVCB = 5 V, f = 100 kHz
Emitter-Base Capacitance
at ÐVEB = 0.5 V, f = 100 kHz
SYMBOL
MIN.
ÐV(BR)CBO
40
ÐV(BR)CEO
40
ÐV(BR)EBO
5
ÐVCEsat
Ð
ÐVCEsat
Ð
ÐVBEsat
Ð
ÐVBEsat
Ð
ÐICEV
Ð
ÐIEBV
Ð
hFE
60
hFE
80
hFE
100
hFE
60
hFE
30
hie
1
fT
250
CCBO
Ð
CEBO
Ð
MAX.
Ð
Ð
Ð
0.25
0.4
0.85
0.95
50
50
Ð
Ð
300
Ð
Ð
10
Ð
4.5
10
UNIT
V
V
V
V
V
V
V
nA
nA
Ð
Ð
Ð
Ð
Ð
kW
MHz
pF
pF