MMBT2222A Datasheet, PDF (2/3 Pages) NXP Semiconductors – NPN switching transistor

MMBT2222A
Small Signal Transistor (NPN)
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
DC Current Gain
VCE = 10 V, IC = 0.1 mA
35
—
—
VCE = 10 V, IC = 1 mA
50
—
—
VCE = 10 V, IC = 10 mA
75
—
—
hFE
VCE = 10 V, IC = 10 mA
TA = -55°C
35
—
—
—
VCE = 10 V, IC = 150 mA⁽¹⁾ 100
—
300
VCE = 10 V, IC = 500 mA⁽¹⁾
40
—
—
VCE = 1.0 V, IC = 150 mA⁽¹⁾ 50
—
—
Collector-Base Breakdown Voltage
V(BR)CBO
IC = 10 µA, IE = 0
75
—
—
V
Collector-Emitter Breakdown Voltage⁽¹⁾
V(BR)CEO
IC = 10 mA, IB = 0
40
—
—
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IC = 10 µA, IC = 0
6.0
—
—
V
Collector-Emitter Saturation Voltage⁽¹⁾
VCEsat
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
—
—
—
0.3
—
1.0
V
Base-Emitter Saturation Voltage⁽¹⁾
VBEsat
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
0.6
—
—
1.2
—
2.0
V
Collector Cut-off Current
ICEX
VEB = 3 V, VCE = 60 V
—
—
10
nA
Collector Cut-off Current
VCB = 60 V, IE = 0
—
—
10
nA
ICBO
VCB = 50 V, IE = 0 V
TA = 125°C
—
—
10
µA
Base Cut-off Current
IBL
VEB = 3 V, VCE = 60 V
—
—
20
nA
Emitter Cut-off Current
IEBO
VEB = 3 VDC, IC = 0
—
—
100
nA
Current Gain-Bandwidth Product
fT
VCE = 20 V, IC = 20 mA
f = 100 MHz
300
—
—
MHz
Output Capacitance
Cobo VCB = 10 V, f = 1 MHz, IE = 0 —
—
8
pF
Input Capacitance
Cibo VEB = 0.5 V, f = 1 MHz, IC = 0 —
—
25
pF
Noise Figure
NF
VCE = 10 V, IC = 100 µA,
RS = 1 kΩ, f = 1 kHz
—
—
4.0
dB
Input Impedance
VCE = 10 V, IC = 1 mA
2
—
8.0
f = 1 kHz
hie
kΩ
VCE = 10 V, IC = 10 mA 0.25
—
1.25
f = 1 kHz
Small Signal Current Gain
Voltage Feedback Ratio
VCE = 10 V, IC = 1 mA,
50
f = 1 kHz
hfe
VCE = 10 V, IC = 10 mA,
75
f = 1 kHz
hre
VCE = 10 V, IC = 1 mA,
f = 1 kHz
50
75
—
300
—
—
375
—
—
300
375
—
Output Admittance
VCE = 10 V, IC = 1 mA,
5.0
—
35
f = 1 kHz
hoe
VCE = 10 V, IC = 10 mA,
25
µS
—
200
f = 1 kHz
Note:
(1) Pulse Test: Pulse width ≤ 300 µs - Duty cycle ≤ 2%