MMBT2222A Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN switching transistor

MMBT2222A
Small Signal Transistor (NPN)
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
.016 (0.4)
Top View
3
New ^Product
Mounting Pad Layout
0.037 (0.95)
0.037 (0.95)
1
2
.037(0.95) .037(0.95)
Pin Configuration
1 = Base 2 = Emitter
3 = Collector
0.035 (0.9)
0.079 (2.0)
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
0.031 (0.8)
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking Code: 1P
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape)
E9/3K per 7” reel (8mm tape)
Features
• NPN Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
• This transistor is also available in the TO-92 case
with the type designation MPS2222A.
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameters
Symbols
Value
Units
Collector-Base Voltage
VCBO
75
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current
IC
Power Dissipation
on FR-5 Board⁽¹⁾ TA = 25°C
Derate above 25°C
Ptot
600
mA
225
mW
1.8
mW/°C
Power Dissipation
on Alumina Substrate⁽²⁾ TA = 25°C
Derate above 25°C
Ptot
300
mW
2.4
mW/°C
Thermal Resistance Junction
to Ambient Air
FR-5 Board
Alumina Substrate
RΘJA
556
417
°C/W
Junction Temperature
Storage Temperature Range
Tj
150
°C
TS
– 55 to +150
°C
Notes: (1) FR-5 = 1.0 x 0.75 x 0.062 in.
(2) Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
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