GFB75N03 Datasheet, PDF (2/5 Pages) General Semiconductor – N-Channel Enhancement-Mode MOSFET

GFB75N03
N-Channel Enhancement-Mode MOSFET
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Static
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
30
Drain-Source On-State Resistance⁽¹⁾
RDS(on)
VGS = 10V, ID = 38A
–
VGS = 4.5V, ID = 31A
–
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250µA
1.0
Zero Gate Voltage Drain Current
IDSS
VDS = 30V, VGS = 0V
–
Gate-Body Leakage
On-State Drain Current⁽¹⁾
Forward Transconductance⁽¹⁾
IGSS
VGS = ±20V, VDS = 0V
–
ID(on)
VDS ≥ 5V, VGS = 10V
75
gfs
VDS = 15V, ID = 38A
–
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS=15V, ID=38A, VGS=5V
–
Qg
–
VDS = 15V, VGS = 10V
Qgs
–
ID = 38A
Qgd
–
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
td(on)
–
tr
VDD = 15V, RL = 15Ω
–
td(off)
ID ≅ 1A, VGEN = 10V
–
tf
RG = 6Ω
–
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
–
VDS = 15V, VGS = 0V
Coss
–
f = 1.0MHZ
Crss
–
Source-Drain Diode
Max. Diode Forward Current
IS
–
–
Diode Forward Voltage
VSD
IS = 38A, VGS = 0V
–
Note:
(1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%
Typ
Max
–
–
5.8
6.5
8.5
9.5
–
3.0
–
1.0
–
±100
–
–
61
–
32.5
46
63
90
11
–
11
–
13
26
16
29
94
132
38
57
3240
–
625
–
285
–
–
75
0.9
1.3
Unit
V
mΩ
V
µA
nA
A
S
nC
ns
pF
A
V
VDD
ton
toff
Switching
Test Circuit
VIN
RD
D
VOUT
Switching
Waveforms
td(on)
tr
td(off)
90%
tf
90 %
VGEN
RG
DUT
G
S
Output, VOUT
Input, VIN 10%
10%
50%
10%
INVERTED
90%
50%
PULSE WIDTH