GFB75N03 Datasheet, PDF (1/5 Pages) General Semiconductor – N-Channel Enhancement-Mode MOSFET

GFB75N03
N-Channel Enhancement-Mode MOSFET
TG^REENNC_F^HET®
TO-263AB
VDS 30V RDS(ON) 6.5mΩ ID 80A
New ^Product
D
G
0.380 (9.65)
0.420 (10.67)
0.21 (5.33)
Min.
D
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
S
0.42
(10.66)
0.320 (8.13)
0.360 (9.14)
PIN
GDS
Seating Plate
-T-
0.096 (2.43)
0.102 (2.59)
0.027 (0.686)
0.037 (0.940)
0.575 (14.60)
0.625 (15.88)
0.120 (3.05)
0.155 (3.94)
0.055 (1.39)
0.066 (1.68)
Dimensions in inches
and (millimeters)
0.014 (0.35)
0.020 (0.51)
0.100 (2.54)
0.130 (3.30)
0.63
(17.02)
0.33
(8.38)
Mounting Pad
Layout
0.08
(2.032)
0.24
(6.096)
0.12
(3.05)
Mechanical Data
Case: JEDEC TO-263 molded plastic body
Terminals: Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mounting Position: Any Weight: 1.3g
Features
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for Low Voltage DC/DC Converters
• Fast Switching for High Efficiency
Maximum Ratings and Thermal Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current⁽¹⁾
VDS
30
VGS
± ₂₀
ID
80
Pulsed Drain Current
IDM
240
Maximum Power Dissipation
TA = 25°C
TA = 100°C
PD
69.4
27.8
Operating Junction and Storage Temperature Range
TJ, Tstg
–55 to 150
Lead Temperature (1/8” from case for 5 sec.)
TL
275
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance⁽²⁾
RθJC
1.8
RθJA
40
Notes: (1) Maximum DC current limited by the package
(2) 1-in² 2oz. Cu PCB mounted
Unit
V
A
W
°C
°C
°C/W
°C/W
5/1/01