BAS85 Datasheet, PDF (2/2 Pages) NXP Semiconductors – Schottky barrier diode

BAS85
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Reverse Breakdown Voltage
tested with 10 µA Pulses
V_(BR)R
30
–
Forward Voltage
Pulse Test t_p < 300 µs, δ < 2%
at I_F = 0.1 mA
at I_F = 1 mA
at I_F = 10 mA
at I_F = 30 mA
at I_F = 100 mA
V_F
–
–
V_F
–
–
V_F
–
–
V_F
–
0.5
V_F
–
–
Leakage Current
at V_R = 25 V
Capacitance
at V_R = 1 V, f = 1 MHz
Thermal Resistance
Junction to Ambient Air
I_R
–
0.2
C_tot
–
–
R_thJA
–
–
Reverse Recovery Time
t_rr
from I_F = 10 mA to I_R = 10 mA to I_R = 1 mA
–
–
1) _{Valid provided that electrodes are kept at ambient temperature.}
Max.
Unit
–
V
0.24
V
0.32
V
0.4
V
–
V
0.8
V
2
µA
10
pF
430¹⁾
K/W
5
ns