BAS85 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Schottky barrier diode

MiniMELF
Cathode Mark
.142 (3.6)
.134 (3.4)
.019 (0.48)
.011 (0.28)
BAS85
Schottky Diodes
FEATURES
♦ For general purpose applications
♦ This diode features low turn-on voltage.
The devices are protected by a PN junc-
tion guard ring against excessive voltage,
such as electrostatic discharges.
♦ This diode is also available in a DO-35 case with type
designation BAT85.
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case: MiniMELF Glass Case (SOD-80)
Weight: approx. 0.05 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Continuous Reverse Voltage
V_R
Forward Continuous Current at T_amb = 25 °C
I_F
Peak Forward Current at T_amb = 25 °C
I_FM
Surge Forward Current
at t_p < 1 s, T_amb = 25 °C
Power Dissipation at T_amb = 65 °C
Junction Temperature
I_FSM
P_tot
T_j
Storage Temperature Range
T_S
1) _{Valid provided that electrodes are kept at ambient temperature.}
Value
Unit
30
V
200¹⁾
mA
300¹⁾
mA
600¹⁾
mA
200¹⁾
mW
125
°C
–55 to +150
°C
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