MB85R2001_09 Datasheet, PDF (6/16 Pages) Fujitsu Component Limited. – Memory FRAM CMOS 2 M Bit (256 K × 8)

MB85R2001
■ ELECTRICAL CHARACTERISTICS
1. DC CHARACTERISTICS
Parameter
Symbol
Condition
(within recommended operating conditions)
Value
Unit
Min
Typ
Max
Input Leakage Current
|ILI| VIN = 0 V to VCC
⎯
⎯
10
μA
Output Leakage Current
|ILO|
VOUT = 0 V to VCC,
CE1 = VIH or OE = VIH
⎯
⎯
10
μA
Supply Current
ICC
CE1 = 0.2 V, CE2 = VCC − 0.2 V,
IOUT = 0 mA*¹
⎯
10
15
mA
CE1 ≥ VCC − 0.2 V
Standby Current
ISB CE2 ≤ 0.2 V*²
⎯
10
50
μA
OE ≥ VCC − 0.2 V, WE ≥ VCC − 0.2 V*²
Output Voltage (high)
VOH IOH = − 2.0 mA
VCC x 0.8 ⎯
⎯
V
Output Voltage (low)
VOL IOL = 2.0 mA
⎯
⎯
0.4
V
*1 : During the measurement of ICC, the Address, Data In were taken to only change once per active cycle.
IOUT: output current
*2 : All pins other than setting pins should be input at the CMOS level voltages such as H ≥ VCC − 0.2 V, L ≤ 0.2 V.
6
DS05-13107-4E