|
MB85R2001_08 Datasheet, PDF (6/16 Pages) Fujitsu Component Limited. – Memory FRAM CMOS 2 M Bit (256 K × 8) | |||
|
◁ |
MB85R2001
â ELECTRICAL CHARACTERISTICS
1. DC CHARACTERISTICS
Parameter
Symbol
Test Condition
(within recommended operating conditions)
Value
Unit
Min
Typ
Max
Input Leakage Current
|ILI| VIN = 0 V to VCC
â¯
â¯
10
µA
Output Leakage Current
|ILO|
VOUT = 0 V to VCC,
CE1 = VIH or OE = VIH
â¯
â¯
10
µA
Supply Current
ICC
CE1 = 0.2 V, CE2 = VCC â 0.2 V,
IOUT = 0 mA*1
â¯
10
15
mA
CE1 ⥠VCC â 0.2 V
Standby Current
ISB CE2 ⤠0.2 V*2
â¯
10
50
µA
OE ⥠VCC â 0.2 V, WE ⥠VCC â 0.2 V*2
Output Voltage (high)
VOH IOH = â 2.0 mA
VCC x 0.8 â¯
â¯
V
Output Voltage (low)
VOL IOL = 2.0 mA
â¯
â¯
0.4
V
*1 : During the measurement of ICC , the Address, Data In were taken to only change once per active cycle.
IOUT : output current
*2 : All pins other than setting pins should be input at the CMOS level voltages such as H ⥠VCC â 0.2 V, L ⤠0.2 V.
6
|
▷ |