MBM29F017A Datasheet, PDF (43/47 Pages) SPANSION – FLASH MEMORY CMOS 16M (2M x 8) BIT

MBM29F017A-70/-90/-12
s ERASE AND PROGRAMMING PERFORMANCE
Parameter
Min.
Limits
Typ.
Max.
Sector Erase Time
—
1
8
Byte Programming Time
—
8
150
Chip Programming Time
—
16.8
40
Erase/Program Cycle
100,000
—
—
Unit
Comments
sec
Excludes 00H programming
prior to erasure
µs
Excludes system-level
overhead
sec
Excludes system-level
overhead
Cycles
s TSOP PIN CAPACITANCE
Parameter
Symbol
Parameter Description
CIN1
COUT
CIN2
Input Capacitance
Output Capacitance
Control Pin Capacitance
Note: Test conditions TA = 25°C, f = 1.0 MHz
s SON PIN CAPACITANCE
Parameter
Symbol
Parameter Description
CIN1
COUT
CIN2
Input Capacitance
Output Capacitance
Control Pin Capacitance
Note: Test conditions TA = 25°C, f = 1.0 MHz
Test Setup
VIN = 0
VOUT = 0
VIN = 0
Test Setup
VIN = 0
VOUT = 0
VIN = 0
Typ.
Max.
Unit
8
10
pF
8
10
pF
9
10
pF
Typ.
Max.
Unit
8
10
pF
8
10
pF
9
10
pF
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