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| MBM29F017A Datasheet, PDF (1/47 Pages) SPANSION – FLASH MEMORY CMOS 16M (2M x 8) BIT | |||
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FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
16M (2M Ã 8) BIT
DS05-20843-3E
MBM29F017A-70/-90/-12
s FEATURES
⢠Single 5.0 V read, write, and erase
Minimizes system level power requirements
⢠Compatible with JEDEC-standard commands
Pinout and software compatible with single-power supply Flash
Superior inadvertent write protection
⢠48-pin TSOP, 40-pin SON
⢠Minimum 100,000 write/erase cycles
⢠High performance
70 ns maximum access time
⢠Sector erase architecture
Uniform sectors of 64K bytes each
Any combination of sectors can be erased. Also supports full chip erase
⢠Embedded EraseTM Algorithms
Automatically pre-programs and erases the chip or any sector
⢠Embedded ProgramTM Algorithms
Automatically programs and verifies data at specified address
⢠Data Polling and Toggle Bit feature for detection of program or erase cycle completion
⢠Ready/BUSY output (RY/BY)
Hardware method for detection of program or erase cycle completion
⢠Low VCC write inhibit ⤠3.2 V
⢠Hardware RESET pin
Resets internal state machine to the read mode
⢠Erase Suspend/Resume
Supports reading or programming data to a sector not being erased
⢠Sector group protection
Hardware method that disables any combination of sector groups from write or erase operation (a sector group
consists of 4 adjacent sectors of 64K bytes each)
⢠Temporary sector groups unprotection
Hardware method temporarily enable any combination of sectors from write or erase operations
Embedded Eraseâ¢, Embedded Program⢠and ExpressFlash⢠are trademarks of Advanced Micro Devices, Inc.
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