MBM29LV650UE Datasheet, PDF (34/57 Pages) Fujitsu Component Limited. – 64M (4M x 16) BIT

MBM29LV650UE/651UE-90/12
s ERASE AND PROGRAMMING PERFORMANCE
Parameter
Min.
Limits
Typ.
Max.
Sector Erase Time
—
1
10
Programming Time
—
16
360
Chip Programming Time
Erase/Program Cycle
—
—
200
100,000
—
—
s PIN CAPACITANCE
Parameter
Symbol
Parameter Description
CIN
Input Capacitance
COUT
Output Capacitance
CIN2
Control Pin Capacitance
CIN3
ACC Pin Capacitance
Note: Test conditions TA = 25°C, f = 1.0 MHz
Test Setup
VIN = 0
VOUT = 0
VIN = 0
VIN = 0
Unit
Comments
s
µs
s
cycle
Excludes programming time
prior to erasure
Excludes system-level
overhead
Excludes system-level
overhead
—
Typ.
Max.
Unit
6
7.5
pF
8.5
12
pF
8
10
pF
15
20
pF
34