MBM29LV650UE Datasheet, PDF (1/57 Pages) Fujitsu Component Limited. – 64M (4M x 16) BIT

FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
64M (4M × 16) BIT
MBM29LV650UE/651UE -90/12
DS05-20882-2E
s DESCRIPTION
The MBM29LV650UE/651UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The
device is designed to be programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP and
5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard
EPROM programmers.
To eliminate bus contention the devices have separate chip enable (CE), write enable (WE), and output enable
(OE) controls.
The MBM29LV650UE/651UE is entirely command set compatible with JEDEC single-power-supply Flash stan-
dard. Commands are written to the command register using standard microprocessor write timings. Register
contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed for the programming and erase operations.
Typically, each sector can be programmed and verified in about 0.5 seconds.
s PRODUCT LINEUP
(Continued)
Part No.
Ordering Part No.
VCC
=
3.3
V
+0.3 V
–0.3 V
VCC
=
3.0
V
+0.6 V
–0.3 V
Max. Address Access Time (ns)
Max. CE Access Time (ns)
Max. OE Access Time (ns)
s PACKAGES
MBM29LV650UE/651UE
90
—
—
12
90
120
90
120
35
50
48-pin plastic TSOP (I)
Marking Side
(FPT-48P-M19)
Marking Side
(FPT-48P-M20)